CAD | USD

ALTERNATIVE ENERGY

Key Components for Smart Grid

Alternative Energy Smart Grid
View Details

OPTOELECTRONICS

VO14642AT

VO14642AT

Normally Open (Form A) Solid-State Relay

Features

  • 0.25 Ω RON
  • 5300 V isolation voltage
  • DC current of 2 A
  • 800 µs > switching speed

Datasheet icon link VO14642AT

View Details

DIODES

SMP TVS

SMP TVS

400 W SMP TRANSZORB® TVS VWM = 11 V ∼ 36 V

Features

  • Very low height profile 1.0 mm SMP package
  • 400 W peak pulse power capability with10/1000 µs waveform
  • Excellent clamping capability
  • Very fast response time

Datasheet icon link TRANSZORB® eSMP®

View Details

MOSFETs

SiA456DJ

SiA456DJ

Single 200 V N-Channel Power MOSFET

Features

  • 200 V n-channel technology with low threshold voltage
  • Maximum current of 0.9 A
  • 2 mm x 2 mm PowerPAK® SC-70 package
  • Maximum on-resistance of 1.5 Ω at VGS = 2.5 V

Datasheet icon link SiA456DJ

View Details

MOSFETs

SiHG47N60E

SiHG47N60E

Single, 600 V N-Channel Power MOSFET

Features

  • High performance E Series high-voltage Super Junction technology
  • Maximum current of 47 A
  • TO-247 packaging
  • Maximum on-resistance of 0.064 Ω at VGS = 10 V

Datasheet icon link SiHG47N60E

View Details

OPTOELECTRONICS

VSMB2020X01/VEMD2020X01

VSMB2020X01/VEMD2020X01

High Power and Sensitivity Infrared Emitter/PIN Photodiode

Features

  • Radiant intensity of 40 mW/sr at IF = 100 mA
  • Angle of half intensity of ± 12°
  • Reverse light current of 12 µA with
    Ee = 1 mW/cm2
  • Angle of half sensitivity of ± 15°

Datasheet icon link VSMB2020X01
Datasheet icon link VEMD2020X01

View Details

OPTOELECTRONICS

CNY6x

CNY6x

Very High Isolation Voltage and Creepage Coupler

Features

  • High isolation voltage as high as 13.9 kV
  • 17 mm > creepage distance
  • Internal insulation thickness > 3 mm
  • For CAT IV installation ≤ 600 V mains voltage

Datasheet icon link CNY64, CNY65, CNY66

View Details

DIODES

SMAJxx

SMAJxx

300 W/400 W SMA TRANSZORB®TVS VWM = 5 V ∼ 188 V

Features

  • 300 W/400 W peak pulse power capability at10/1000 µs waveform
  • Very fast response time
  • Low profile SMA package
  • Excellent clamping capability

Datasheet icon link SMAJ5.0A thru SMAJ188CA 
Datasheet icon link SMAJ5.0A thru SMAJ188CA (Halogen-Free)
Datasheet icon link SMAJ530 and SMAJ550

 
View Details

ICs

DG201B

DG201B

Quad CMOS Analog Switch

Features

  • ± 22 V supply voltage rating
  • TTL and CMOS compatible logic
  • Low on-resistance - RDS(on): 45 Ω
  • Low leakage - ID(on): 20 pA

Datasheet icon link DG201B

View Details

DIODES

SMCJxx

SMCJxx

1500 W SMC TRANSZORB® TVS VWM = 5 V ∼ 188 V

Features

  • 1500 W peak pulse power capability at 10/1000 µs waveform
  • Very fast response time
  • Low-profile SMC package
  • Excellent clamping capabilit

Datasheet icon link SMCJ5.0A thru SMCJ188CA
Datasheet icon link SMCJ5.0A thru SMCJ188CA (Halogen-Free)