Discrete Semiconductor Products23,174 Results
- Diodes - Bridge Rectifiers
- Diodes - RF
- Diodes - Rectifiers - Arrays
- Diodes - Rectifiers - Single
- Diodes - Variable Capacitance (Varicaps, Varactors)
- Diodes - Zener - Arrays
- Diodes - Zener - Single
- Power Driver Modules
- Thyristors - DIACs, SIDACs
- Thyristors - SCRs
- Thyristors - TRIACs
- Transistors - Bipolar (BJT) - Arrays
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Transistors - Bipolar (BJT) - RF
- Transistors - Bipolar (BJT) - Single
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Transistors - FETs, MOSFETs - Arrays
- Transistors - FETs, MOSFETs - RF
- Transistors - FETs, MOSFETs - Single
- Transistors - IGBTs - Modules
- Transistors - IGBTs - Single
- Transistors - JFETs
- Transistors - Programmable Unijunction
- Transistors - Special Purpose
Diodes - Bridge Rectifiers
Diode bridge rectifiers are an arrangement of diodes in a bridge circuit configuration for conversion of an alternating current (AC) input to a direct current (DC) output. These components can be chassis, DIN rail, surface or through-hole mounted, and are selected by single phase or three phase diode type, forward voltage rating, average rectified current, and technology.
Diodes - RF
RF Diodes are a semiconductor device with two terminals that allows the flow of electricity in one direction and restricts the flow in the other. The devices in this family are used in radio frequency matching circuits for electronic tuning. The diode types are pin, Schottky, and standard, with reverse voltages ranging from 1 to 15,000 volts and current values ranging from 10 mA to 20 A.
Diodes - Rectifiers - Arrays
Products within the diode and rectifier array family incorporate two or more discrete diodes within a single package. They are characterized in terms similar to those used for single discrete diodes, with the addition of a "Diode Configuration" attribute indicating the presence and character of any internal connections between the diodes in the device. Note that arrays with a full-bridge configuration are specifically excluded, and listed as a separate product family.
Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Diodes - Variable Capacitance (Varicaps, Varactors)
Variable capacitance diodes are produced and characterized for use as electronically-variable capacitors, and are widely used in tuning and frequency synthesis applications. While most all diodes exhibit a junction capacitance that decreases as the amount of reverse bias voltage applied increases and are capable of functioning as variable capacitance diodes, products specifically marketed as such are produced and characterized with this use in mind.
Diodes - Zener - Arrays
A Zener diode allows current to flow not only from its anode to its cathode, but also in the reverse direction when its Zener voltage is reached. They are used as voltage references and to regulate the voltage across small circuits. Zener diode networks or arrays are devices of two or more diodes in a single surface mount package. The diodes may be isolated from each other or connected in a common anode or common cathode circuit type.
Diodes - Zener - Single
Zener diodes are designed for operation in a reverse-breakdown mode and are characterized according to their behavior when used in this fashion. Useful as a voltage reference or for voltage limiting purposes, they are also capable of functioning as a one-way valve for current flow in the manner of rectifier diodes, though their behavior in this mode is generally less ideal than that of purpose-built devices. Products within this family implement exactly one instance of this function per device package.
Power Driver Modules
Power driver modules provide the physical containment for power components, usually IGBTs and MOSFETs in a half bridge or one-, two- or three-phase configurations. Power semiconductors or dies are soldered or sintered on a substrate that carries the power semiconductors and provides electrical and thermal contact and electrical insulation where needed. Power modules provide a higher power density and are in many cases more reliable and easier to cool.
Thyristors - DIACs, SIDACs
Products in the DIAC and SIDAC family are two-terminal devices most commonly used as triggering mechanisms in AC phase control applications. They act to oppose current flow until the voltage applied across them reaches some critical value, at which point current flow through them increases significantly. The two differ in the shape of their characteristic curves; DIACs (Diodes for Alternating Current) generally exhibit higher forward voltages in their conductive mode, and thus tend to be less suitable than SIDACs (Silicon Diode for Alternating Current) when substantial current flow is an application requirement.
Thyristors - SCRs
Silicon Controlled Rectifiers (SCRs) are three-terminal devices that behave like rectifier diodes, with an added ability to block current flow in the forward direction until a control signal is applied. Most commonly used for controlling AC utility power, SCRs are also known as thyristors, though this latter term is also sometimes applied to other related devices.
Thyristors - TRIACs
Thyristors conduct AC (alternating current) in one direction or one half of an AC cycle. A TRIAC (triode AC) conducts current in either direction when its gate is triggered. Other names include bidirectional triode thyristor or bilateral triode thyristor. TRIAC types are snubberless, alternistor, internally triggered, logic gate and standard which are chassis, surface or through-hole mount. Selection is by off state voltage, on state current, hold current and gate trigger voltage.
Transistors - Bipolar (BJT) - Arrays
Bipolar transistor arrays incorporate two or more discrete transistors in a shared package, either as electrically separate entities or with interconnections of some form between them being made inside the device package. Arrays in which the devices contained have closely matched or complementary characteristics, the co-packaged character minimizes temperature differences between devices during operation.
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Pre-biased bipolar transistor arrays incorporate two or more bipolar transistors, along with resistors connected to each transistor in a manner likely to be useful, typically with one resistor between each transistor's emitter and base terminals, and another connected to each transistor's base terminal and a user-accessible pin on the device package.
Transistors - Bipolar (BJT) - RF
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Transistors - Bipolar (BJT) - Single
Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
Transistors - Bipolar (BJT) - Single, Pre-Biased
Pre-biased bipolar transistors have internal resistors designed to maintain the device near the bias or operating point with no input signal applied. Transistor biasing allows the transistor to work more efficiently and produce a stable, undistorted output signal. Pre-biased transistors reduce the number of external circuit components required, thereby reducing project costs.
Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Transistors - FETs, MOSFETs - RF
RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Transistors - IGBTs - Modules
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.
Transistors - IGBTs - Single
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Transistors - JFETs
Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
Transistors - Programmable Unijunction
Programmable unijunction transistors (PUTs) are a relative of Silicon Controlled Rectifier (SCR) devices, having a characteristic behavior somewhat like a unidirectional DIAC with a user-configurable threshold voltage. While useful for creating low frequency oscillator and timing functions, SCR triggering applications, and others, alternative techniques for addressing such needs have gained greater favor.
Transistors - Special Purpose
Products in the special purpose transistor family are discrete transistors or transistor arrays, with or without additional integrated passive components and internal connections, that are intended for or adapted to some narrow or specific purpose such as current mirroring, balancing series connected capacitor banks, or load switching.