CAD | USD

Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series

Littelfuse offers the enhancement-mode SiC MOSFET, 1200 V, N-channel LSIC1MO120E series

Image of Littelfuse's Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E0080 SeriesLittelfuse's SiC MOSFET LSIC1MO120E series provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.

State of the SiC MOSFET: Device Evolution, Technology Merit, and Commercial Prospects

Features
  • Ultra-fast switching speeds
  • Lower switching losses
  • High temperature operation
  • High blocking voltages and low specific on-resistance (SiC material properties)
Applications
  • Power conversion systems
  • Solar inverters
  • Switch mode power supplies
  • UPS systems
  • Motor drives
  • High voltage DC/DC converters
  • Battery chargers

Silicon Carbide (SiC) Ultra-Fast Switching MOSFET

ImageManufacturer Part NumberDescriptionFET TypeTechnologyAvailable QuantityView Details
MOSFET SIC 1200V 39A TO247-3LSIC1MO120E0080MOSFET SIC 1200V 39A TO247-3N-ChannelSiCFET (Silicon Carbide)3 - Immediate
20250 - Factory Stock
View Details
SIC MOSFET 1200V 27A TO247-3LSIC1MO120E0120SIC MOSFET 1200V 27A TO247-3N-ChannelSiCFET (Silicon Carbide)206 - Immediate
900 - Factory Stock
View Details
SIC MOSFET 1200V 22A TO247-3LSIC1MO120E0160SIC MOSFET 1200V 22A TO247-3N-ChannelSiCFET (Silicon Carbide)269 - Immediate
33300 - Factory Stock
View Details
Published: 2018-01-05