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Live demo from APEC 2015 SiC462 Buck Regulator
APEC 2015 demo showing breath and versatility of Vishay Siliconix MOSFET product portfolio.
Lowest low-Side on-resistance at VGS = 4.5 V among devices with compatible footprints.
Super Junction n-channel power MOSFETs with a 30 % reduction in specific on-resistance vs. S Series, along with process optimization.
Vishay BUS-port protection device
Signal is not distorted, Protection device has low capacitance, clamps above 5v working range and right below ground level.
The function of the bypass diode in solar panel is to direct current and skip shaded cells. At the same condition, TMBS has a lower case temperature and wider operating range
Saves solution space and cost, Reduced parasitics, Reduced package count, Simplifies layout and assembly.
DrMOS 6x6 – SiC769 The industry-best power density for mainstream multi-phase Vcore applications
Introduction to the TrenchFET (R) Gen III P-Channel MOSFETs.
Introduction into the new E Series of 600 V, Super Junction N-Channel Power MOSFETs with a 30 % reduction in specific on-resistance vs. S Series, along with process optimization and applications.
Charge injection is the key factor causing switching related distortion in high accuracy multi channel signal switching commonly seen in data acquisition and test instrumentation applications.
The SiZ700DT is the industry’s first dual TrenchFET® asymmetric power MOSFET in the new PowerPAIR® package, which measures 6 mm by 3.7 mm.
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