Name: SISA26DN-T1-GE3
Brand: Vishay Siliconix
SKU: SISA26DN-T1-GE3TR-ND
Price: 2.26 CAD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISA26DN-T1-GE3
DigiKey Part Number	SISA26DN-T1-GE3TR-ND - Tape & Reel (TR) SISA26DN-T1-GE3CT-ND - Cut Tape (CT) SISA26DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISA26DN-T1-GE3
Description	MOSFET N-CH 25V 60A PPAK1212-8S
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	N-Channel 25 V 60A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet	Datasheet
EDA/CAD Models	SISA26DN-T1-GE3 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Series TrenchFET® Gen IV	Vgs (Max) +16V, -12V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 2247 pF @ 10 V
Part Status Active	Power Dissipation (Max) 39W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 25 V	Supplier Device Package PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C 60A (Tc)	Package / Case PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number SISA26
Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V