N-Channel 600 V 33A (Tc) 278W (Tc) Through Hole TO-220AB
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N-Channel 600 V 33A (Tc) 278W (Tc) Through Hole TO-220AB
TO-220AB

SIHP33N60E-GE3

DigiKey Part Number
742-SIHP33N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHP33N60E-GE3
Description
MOSFET N-CH 600V 33A TO220AB
Manufacturer Standard Lead Time
22 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 33A (Tc) 278W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP33N60E-GE3 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3508 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHP33
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In-Stock: 803
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Quantity
All prices are in CAD
Tube
QuantityUnit PriceExt Price
1$10.44000$10.44
50$5.57300$278.65
100$5.10440$510.44
500$4.28386$2,141.93
1,000$4.23273$4,232.73
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.