Name: SI8812DB-T2-E1
Brand: Vishay Siliconix
SKU: SI8812DB-T2-E1TR-ND
Price: 1.16 CAD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI8812DB-T2-E1
DigiKey Part Number	SI8812DB-T2-E1TR-ND - Tape & Reel (TR) SI8812DB-T2-E1CT-ND - Cut Tape (CT) SI8812DB-T2-E1DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SI8812DB-T2-E1
Description	MOSFET N-CH 20V 4MICROFOOT
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 20 V 2.3A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
Datasheet	Datasheet
EDA/CAD Models	SI8812DB-T2-E1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 59mOhm @ 1A, 4.5V
Mfr Vishay Siliconix	Vgs(th) (Max) @ Id 1V @ 250µA
Series TrenchFET®	Gate Charge (Qg) (Max) @ Vgs 17 nC @ 8 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Vgs (Max) ±5V
Part Status Active	Power Dissipation (Max) 500mW (Ta)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 20 V	Supplier Device Package 4-Microfoot
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)	Package / Case 4-UFBGA
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V	Base Product Number SI8812