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TO-247-3 HiP

SCTW40N120G2VAG

Digi-Key Part Number
497-SCTW40N120G2VAG-ND
Manufacturer
STMicroelectronics
Manufacturer Product Number
SCTW40N120G2VAG
Supplier
Description
SICFET N-CH 1200V 33A HIP247
Manufacturer Standard Lead Time
26 Weeks
Detailed Description
N-Channel 1200V 33A (Tc) 290W (Tc) Through Hole HiP247™
Customer Reference
Product Attributes
Type
Description
Select
Category
Mfr
STMicroelectronics
Series
Package
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Vgs (Max)
+22V, -10V
FET Feature
-
Power Dissipation (Max)
290W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
1200V
Gate Charge (Qg) (Max) @ Vgs
63nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
1230pF @ 800V
Environmental & Export Classifications
AttributeDescription
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
Price and Procurement

582 In Stock
Can ship immediately
Import Tariff may apply to this part if shipping to the United States