N-Channel 200 V 5.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
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JAN2N6798

DigiKey Part Number
150-JAN2N6798-ND
Manufacturer
Microsemi Corporation
Manufacturer Product Number
JAN2N6798
Description
MOSFET N-CH 200V 5.5A TO39
Customer Reference
Detailed Description
N-Channel 200 V 5.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
Product Attributes
Type
Description
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Category
Mfr
Microsemi Corporation
Series
-
Packaging
Bulk
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42.07 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/557
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AF Metal Can
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Obsolete
This product is no longer manufactured.