N-Channel 750 V 163A (Tc) 517W (Tc) Through Hole PG-TO247-4-U02
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IMZA75R008M1HXKSA1

DigiKey Part Number
448-IMZA75R008M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA75R008M1HXKSA1
Description
SILICON CARBIDE MOSFET
Customer Reference
Detailed Description
N-Channel 750 V 163A (Tc) 517W (Tc) Through Hole PG-TO247-4-U02
Datasheet
 Datasheet
EDA/CAD Models
IMZA75R008M1HXKSA1 Models
Product Attributes
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Category
Rds On (Max) @ Id, Vgs
7.2mOhm @ 90.3A, 20V
Mfr
Vgs(th) (Max) @ Id
5.6V @ 32.4mA
Series
Gate Charge (Qg) (Max) @ Vgs
178 nC @ 500 V
Packaging
Tube
Vgs (Max)
+23V, -5V
Part Status
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds
6137 pF @ 500 V
FET Type
Power Dissipation (Max)
517W (Tc)
Technology
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
750 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Package / Case
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 0
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Not recommended for new design, minimums may apply
All prices are in CAD
Tube
QuantityUnit PriceExt Price
1$57.66000$57.66
30$38.06500$1,141.95
120$35.28392$4,234.07
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.