N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-4-3
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IMZA65R057M1HXKSA1

DigiKey Part Number
448-IMZA65R057M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R057M1HXKSA1
Description
SILICON CARBIDE MOSFET, PG-TO247
Customer Reference
Detailed Description
N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-4-3
Datasheet
 Datasheet
EDA/CAD Models
IMZA65R057M1HXKSA1 Models
Product Attributes
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Category
Rds On (Max) @ Id, Vgs
74mOhm @ 16.7A, 18V
Mfr
Vgs(th) (Max) @ Id
5.7V @ 5mA
Series
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Packaging
Tube
Vgs (Max)
+20V, -2V
Part Status
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 400 V
FET Type
Power Dissipation (Max)
133W (Tc)
Technology
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 15
Check for Additional Incoming Stock
Not recommended for new design, minimums may apply
All prices are in CAD
Tube
QuantityUnit PriceExt Price
1$16.69000$16.69
30$9.75633$292.69
120$8.23342$988.01
510$7.11773$3,630.04
1,020$6.71087$6,845.09
2,010$6.37576$12,815.28
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.