IMW65R015M2HXKSA1

DigiKey Part Number
448-IMW65R015M2HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMW65R015M2HXKSA1
Description
SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 93A (Tc) 341W (Tc) Through Hole PG-TO247-3-40
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Rds On (Max) @ Id, Vgs
13.2mOhm @ 64.2A, 20V
Vgs(th) (Max) @ Id
5.6V @ 13mA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
2792 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
341W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-40
Package / Case
Base Product Number
In-Stock: 238
Can ship immediately
All prices are in CAD
Tube
QuantityUnit PriceExt Price
1$26.09000$26.09
10$20.72500$207.25
30$19.15433$574.63
120$17.75342$2,130.41
270$17.15389$4,631.55
510$16.77049$8,552.95
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.