600 V MDmesh™ DM2 MOSFETS

STMicroelectronics offers its 600 V MDmesh DM2 MOSFETs for industrial applications

Image of STMicroelectronics' 600 V MDmesh DM2 MOSFETSSTMicroelectronics' latest high-efficiency fast recovery diode MOSFET series featuring very low recovery charge (Qrr) and recovery time (trr) is optimized for high-voltage full-bridge and half-bridge topologies requiring high switching performance. These 600 V devices also feature ultra-low Qg, extremely low Coss / Ciss, very low on-state resistance, and high dv/dt ruggedness.

Key Features
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • Very low recovery charge (Qrr) and recovery time (trr)
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

600 V MDmesh DM2 MOSFETS

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
MOSFET N-CH 600V 24A TO247STW33N60DM2MOSFET N-CH 600V 24A TO2470View Details
MOSFET N-CH 650V 48A TO247STW56N65DM2MOSFET N-CH 650V 48A TO2470View Details
MOSFET N-CH 600V 12A TO220STP18N60DM2MOSFET N-CH 600V 12A TO2200View Details
MOSFET N-CH 600V 12A D2PAKSTB18N60DM2MOSFET N-CH 600V 12A D2PAK53 - ImmediateView Details
MOSFET N-CH 600V 12A TO247STW18N60DM2MOSFET N-CH 600V 12A TO2470View Details
Published: 2016-02-24