onsemi

NCx51705 EliteSiC MOSFET Gate Driver

onsemi's single 6 A high-speed driver can deliver the maximum allowable gate voltage to a EliteSiC MOSFET device

Image of onsemi's NCx51705 SiC MOSFET Gate Driveronsemi's NCx51705 low-side, single 6 A high-speed driver is designed to primarily drive EliteSiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver can deliver the maximum allowable gate voltage to the EliteSiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dv/dt immunity, and even faster turn-off, the NCx51705 can utilize its on-board charge pump to generate a user-selectable negative voltage rail. For isolated applications, the NCx51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high-speed optoisolators.

Resources

Features
  • High peak output current with split output stages
  • Extended positive voltage rating up to 28 V max
  • User-adjustable built-in negative charge pump (-3.3 V to -8 V)
  • Accessible 5 V reference/bias rail
  • Adjustable undervoltage lockout
  • Fast desaturation function
  • QFN24 package 4 mm x 4 mm
  • Allow independent on/off adjustment
  • Efficient SiC MOSFET operation during the conduction period
  • Fast turn-off and robust dv/dt immunity
  • Minimize complexity of bias supply in isolated gate drive applications
  • Sufficient VGS amplitude to match SiC best performance
  • Self-protection of the design
  • Small and low parasitic inductance package
Applications
  • High-performance inverters
  • High-power motor drivers
  • Totem pole PFCs
  • Industrial and motor drivers
  • UPS and solar inverters
  • High-power DC chargers
Updated: 2020-04-03
Published: 2019-11-06

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