Trench 9 40 V MOSFETs

Nexperia’s superjunction MOSFETs in LFPAK56/56E packaging reduce RDS(ON) by up to 30%

Image of Nexperia's Trench 9 40 V MOSFETsNexperia's series of Trench 9 power MOSFETs, targeted primarily at the automotive industry, combine the company’s low voltage superjunction technology with its advanced packaging capability to deliver high performance and ruggedness. Nexperia is expanding on its portfolio of automotive-qualified Power-SO8 MOSFETs to include ultra-low RDS(ON) parts that address the ever-increasing demand for higher power density in many typical automotive applications. The Trench 9 devices are all qualified to AEC-Q101, and exceed the requirements of this international automotive standard by as much as two times on key reliability tests including temperature cycling, high temperature gate bias, high temperature reverse bias, and intermittent operating life.

FPAK56E is the latest innovation in the family of automotive LFPAK packages from Nexperia. LFPAK56E is an enhanced version of the popular LFPAK56 package with an optimized lead frame and package design that results in an improvement in RDS(ON) and power density of up to 30%. This improvement in power density enables the Trench 9 LFPAK56 MOSFETs to be used in applications previously only possible with D2PAK and D2PAK-7, delivering significant PCB space-savings.

Nexperia’s superjunction technology offers an improved avalanche and safe operating area (SOA) capability when compared to competing technology ensuring critical devices survive even in fault conditions. Traditionally, most suppliers will not recommend TrenchMOS technologies for single shot or repetitive avalanche applications. Trench 9 is specifically designed to offer exceptional single shot and repetitive avalanche performance for demanding application and fault conditions, and Nexperia’s Trench 9 MOSFET datasheets include single-shot and repetitive avalanche ratings.

Features
  • Six standard level products from 1.4 mΩ to 3.5 mΩ
  • RDS(ON) capability improved from 3 mΩ to 1.4 mΩ
  • Very robust super junction technology with exceptional SOA and avalanche capability
  • Enhanced LFPAK56E design allows up to 30% improvement in RDS(ON) and power density
  • Improved efficiency and power density through lower RDS(ON) and enhanced switching performance
  • Tight Vth limits enables easy paralleling of MOSFETs in high current applications
  • Enhanced ID max. up to 120 A
Applications

  • Motor control (brushed and brushless)
  • Power steering and transmission control
  • ABS and electronic stability control (ESC)
  • Pumps: water, oil, and fuel
  • Reverse battery protection
  • DC/DC converters

Trench 9 40 V MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
MOSFET N-CH 40V 120A LFPAK56BUK7Y3R5-40HXMOSFET N-CH 40V 120A LFPAK567500 - ImmediateView Details
MOSFET N-CH 40V 120A LFPAK56BUK7J1R4-40HXMOSFET N-CH 40V 120A LFPAK560View Details
MOSFET N-CH 40V 120A LFPAK56BUK7Y1R7-40HXMOSFET N-CH 40V 120A LFPAK561496 - ImmediateView Details
MOSFET N-CH 40V 120A LFPAK56BUK7Y2R0-40HXMOSFET N-CH 40V 120A LFPAK561496 - ImmediateView Details
MOSFET N-CH 40V 120A LFPAK56BUK7Y2R5-40HXMOSFET N-CH 40V 120A LFPAK561361 - ImmediateView Details
MOSFET N-CH 40V 120A LFPAK56BUK7Y3R0-40HXMOSFET N-CH 40V 120A LFPAK560View Details
Published: 2017-11-30