IPD082N10N3GBTMA1 Infineon Technologies | Discrete Semiconductor Products

IPD082N10N3GBTMA1 is Obsolete and no longer manufactured.

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Infineon Technologies

In Stock: 13,792

Unit Price: $3.73000

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IPD082N10N3GBTMA1
DigiKey Part Number	IPD082N10N3GBTMA1TR-ND - Tape & Reel (TR)
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD082N10N3GBTMA1
Description	MOSFET N-CH 100V 80A TO252-3
Customer Reference
Detailed Description	N-Channel 100 V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number	IPD082N