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Designs (49)

49 Results - Page 1/5 |< < 1 2 3 4 5
Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9001: 15A @ 0 ~ 40V, Half Bridge Manufacturer: EPC

The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9051: 1A, 0 ~ 40V, 15MHz, Class E Amplifier Manufacturer: EPC

The EPC9051 is a high efficiency, differential mode class-E amplifier demonstration board that can operate up to 15 MHz. This board may also be used for applications where a low side switch is utilized. Examples include, and are not limited to, push-pull converters, current-mode Class D amplifiers, common source bi-directional switch, and generic high voltage narrow pulse width applications such as LiDAR.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9066: 2.7A, 0 ~ 40V, Half H-Bridge Manufacturer: EPC

The EPC9066 development board is a 40 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9048: 12A, 0 ~ 160V, Half H-Bridge Manufacturer: EPC

The EPC9048 development boards are in a half bridge topology with onboard gate drives, featuring the EPC2034 eGaN field effect transistors (FETs).

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) STK554U392AGEVB: 15A, 0 ~ 450V, 3-Ph Half Bridges Manufacturer: onsemi

Evaluation board for the "Inverter Power H-IC" highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single small SIP module.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9203: 20A, 0 ~ 60V, Half H-Bridge Driver Manufacturer: EPC

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9080: 30A, 0 ~ 100V, Half H-Bridge Manufacturer: EPC

The EPC9080 development board is a 100 V maximum device voltage,30 A maximum output current, half bridge with onboard gate drives

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9013: 35A, 100V, Half Bridge Manufacturer: EPC

The EPC9013 development board features the 100 V EPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9014: 4A, 0 ~ 200V, Half H-Bridge Manufacturer: EPC

The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2019

Schematic View Design
Power Management > Power Output Stages (H-Bridge, Half Bridge) EPC9018: 35A, 0 ~ 30V, H-Bridge Manufacturer: EPC

These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs).

49 Results - Page 1/5 |< < 1 2 3 4 5