EVALPWD13F60: 8A, 0 ~ 600V, H-Bridge Driver

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently.

The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage. The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.

The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling. Both controlling and power signals are available on pin strip for easy connection to customer's board.

Key Features

• Power system-in-package integrating gate drivers and high-voltage power MOSFETs: Low RDS(on) = 320 mΩ, BVDSS = 600V

• Suitable for operating as: Full-bridge or Dual independent half-bridges

• Wide input supply voltage down to 6.5 VUVLO protection on supply voltage

• 3.3 V to 15 V compatible inputs with hysteresis and pull-down

• Interlocking function to prevent cross conduction

• Internal bootstrap diodes