Product Index > Discrete Semiconductor Products > Transistors - IGBTs - Single

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Compare Parts Datasheets Image Digi-Key Part Number Manufacturer Part Number Manufacturer Description Quantity Available
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Packaging Series Part Status IGBT Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic Power - Max Switching Energy Input Type Gate Charge Td (on/off) @ 25°C Test Condition Reverse Recovery Time (trr) Operating Temperature Mounting Type Package / Case Supplier Device Package
   
GT10G131(TE12L,Q) Datasheet GT10G131(TE12L,Q) - Toshiba Semiconductor and Storage GT10G131(TE12L,Q)-ND
IGBT 400V 1W 8-SOIC 0 Available: 0
Obsolete
-
Tape & Reel (TR)?
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Obsolete
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400V
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200A 2.3V @ 4V, 200A 1W
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Standard
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3.1µs/2µs
-
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150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0)
GT10J312(Q) Datasheet GT10J312(Q) - Toshiba Semiconductor and Storage GT10J312(Q)-ND
IGBT 600V 10A 60W TO220SM 0 Available: 0
Obsolete
-
Tube?
-
Obsolete
-
600V 10A 20A 2.7V @ 15V, 10A 60W
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Standard
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400ns/400ns 300V, 10A, 100Ohm, 15V 200ns 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220SM
GT60N321(Q) Datasheet Photo Not Available GT60N321(Q)-ND
IGBT 1000V 60A 170W TO3P LH 0 Available: 0
Obsolete
-
Tube?
-
Obsolete
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1000V 60A 120A 2.8V @ 15V, 60A 170W
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Standard
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330ns/700ns
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2.5µs 150°C (TJ) Through Hole TO-3PL TO-3P(LH)
GT8G133(TE12L,Q) Datasheet GT8G133(TE12L,Q) - Toshiba Semiconductor and Storage GT8G133(TE12L,Q)-ND
IGBT 400V 600MW 8TSSOP 0 Available: 0
Obsolete
-
Tape & Reel (TR)?
-
Obsolete
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400V
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150A 2.9V @ 4V, 150A 600mW
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Standard
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1.7µs/2µs
-
-
150°C (TJ) Surface Mount 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP
GT50J121(Q) Datasheet Photo Not Available GT50J121(Q)-ND
IGBT 600V 50A 240W TO3P LH 0 Available: 0
Obsolete
-
Tube?
-
Obsolete
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600V 50A 100A 2.45V @ 15V, 50A 240W 1.3mJ (on), 1.34mJ (off) Standard
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90ns/300ns 300V, 50A, 13Ohm, 15V
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150°C (TJ) Through Hole TO-3PL TO-3P(LH)
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15:45:43 8/25/2019