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SUD50N04-8M8P-4GE3 N-Channel 40V 14A (Ta), 50A (Tc) 3.1W (Ta), 48.1W (Tc) Surface Mount TO-252, (D-Pak)
Price & Procurement
18,969 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.46000 $1.46
10 1.31500 $13.15
25 1.24760 $31.19
100 0.93570 $93.57
250 0.92680 $231.70
500 0.79316 $396.58
1,000 0.64611 $646.11

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SUD50N04-8M8P-4GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 17,500 - Immediate
  • Unit Price: $0.63720

SUD50N04-8M8P-4GE3

Datasheet
Digi-Key Part Number SUD50N04-8M8P-4GE3CT-ND
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Manufacturer

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Manufacturer Part Number SUD50N04-8M8P-4GE3
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Description MOSFET N-CH 40V 14A TO-252
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 40V 14A (Ta), 50A (Tc) 3.1W (Ta), 48.1W (Tc) Surface Mount TO-252, (D-Pak)

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Documents & Media
Datasheets SUD50N04-8M8P
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Wafer Site 12/Sep/2018
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 20V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 48.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SUD50N04-8M8P-4GE3CT
SUD50N04-8M8P-GE3CT
SUD50N04-8M8P-GE3CT-ND