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SQ2310ES-T1_GE3 N-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236
Price & Procurement
93,893 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.05000 $1.05
10 0.92200 $9.22
100 0.62920 $62.92
500 0.52576 $262.88
1,000 0.44745 $447.45

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SQ2310ES-T1_GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 93,000 - Immediate
  • Unit Price: $0.40727
  • Digi-Reel®  : SQ2310ES-T1_GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 93,893 - Immediate
  • Unit Price: Digi-Reel®

SQ2310ES-T1_GE3

Datasheet
Digi-Key Part Number SQ2310ES-T1_GE3CT-ND
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Manufacturer

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Manufacturer Part Number SQ2310ES-T1_GE3
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Description MOSFET N-CH 20V 6A SOT23
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Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236

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Documents & Media
Datasheets SQ2310ES
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin SIL-058-2014-Rev-2 15/Sep/2014
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 485pF @ 10V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SQ2310ES-T1-GE3CT
SQ2310ES-T1-GE3CT-ND
SQ2310ES-T1_GE3CT