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SISS27ADN-T1-GE3 P-Channel 30V 50A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Price & Procurement
4,298 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.32000 $1.32
10 1.16700 $11.67
100 0.79570 $79.57
500 0.66484 $332.42
1,000 0.56583 $565.83

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SISS27ADN-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: $0.54843
  • Digi-Reel®  : SISS27ADN-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 4,298 - Immediate
  • Unit Price: Digi-Reel®

SISS27ADN-T1-GE3

Datasheet
Digi-Key Part Number SISS27ADN-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SISS27ADN-T1-GE3
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Description MOSFET P-CH 30V 50A POWERPAK1212
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 50A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

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Documents & Media
Datasheets SISS27ADN
Featured Product P-Channel MOSFETs
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET® Gen III
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4660pF @ 15V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case PowerPAK® 1212-8S
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SISS27ADN-T1-GE3CT