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SI6562CDQ-T1-GE3 Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP
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Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.43000 $1.43
10 1.28200 $12.82
100 1.00010 $100.01
500 0.82612 $413.06
1,000 0.65221 $652.21

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Alternate Package

SI6562CDQ-T1-GE3

Datasheet
Digi-Key Part Number SI6562CDQ-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI6562CDQ-T1-GE3
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Description MOSFET N/P-CH 20V 6.7A 8-TSSOP
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Detailed Description

Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP

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Documents & Media
Datasheets SI6562CDQ
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.7A, 6.1A
Rds On (Max) @ Id, Vgs 22mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
Power - Max 1.6W, 1.7W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Base Part Number SI6562
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI6562CDQ-T1-GE3CT