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SI5424DC-T1-GE3 N-Channel 30V 6A (Tc) 2.5W (Ta), 6.25W (Tc) Surface Mount 1206-8 ChipFET™
Price & Procurement
5,996 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.01000 $1.01
10 0.87900 $8.79
100 0.59930 $59.93
500 0.50074 $250.37
1,000 0.42615 $426.15

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Alternate Package
  • Tape & Reel (TR)  : SI5424DC-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: $0.38788
  • Digi-Reel®  : SI5424DC-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 5,996 - Immediate
  • Unit Price: Digi-Reel®

SI5424DC-T1-GE3

Datasheet
Digi-Key Part Number SI5424DC-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI5424DC-T1-GE3
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Description MOSFET N-CH 30V 6A 1206-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 30V 6A (Tc) 2.5W (Ta), 6.25W (Tc) Surface Mount 1206-8 ChipFET™

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Documents & Media
Datasheets SI5424DC
Video File MOSFET Technologies for Power Conversion
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI5424DC-T1-GE3CT