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SI4463BDY-T1-E3 P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO
Price & Procurement
2,646 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 2.07000 $2.07
10 1.84900 $18.49
25 1.75560 $43.89
100 1.31650 $131.65
250 1.30388 $325.97
500 1.11582 $557.91
1,000 0.90896 $908.96

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4463BDY-T1-E3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 2,500 - Immediate
  • Unit Price: $0.87031
  • Digi-Reel®  : SI4463BDY-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 2,646 - Immediate
  • Unit Price: Digi-Reel®

SI4463BDY-T1-E3

Datasheet
Digi-Key Part Number SI4463BDY-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI4463BDY-T1-E3
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Description MOSFET P-CH 20V 9.8A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO

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Documents & Media
Datasheets SI4463BDY
Video File MOSFET Technologies for Power Conversion
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 13.7A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4463BDY-T1-E3CT