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SI4447ADY-T1-GE3 P-Channel 40V 7.2A (Tc) 4.2W (Tc) Surface Mount 8-SO
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14,164 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 0.83000 $0.83
10 0.73300 $7.33
100 0.49940 $49.94
500 0.41726 $208.63
1,000 0.35512 $355.12

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Alternate Package
  • Tape & Reel (TR)  : SI4447ADY-T1-GE3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 12,500 - Immediate
  • Unit Price: $0.34420
  • Digi-Reel®  : SI4447ADY-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 14,164 - Immediate
  • Unit Price: Digi-Reel®

SI4447ADY-T1-GE3

Datasheet
Digi-Key Part Number SI4447ADY-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI4447ADY-T1-GE3
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Description MOSFET P-CH 40V 7.2A 8SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 40V 7.2A (Tc) 4.2W (Tc) Surface Mount 8-SO

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Documents & Media
Datasheets SI4447ADY-T1-GE3
Video File MOSFET Technologies for Power Conversion
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 20V
FET Feature -
Power Dissipation (Max) 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4447ADY-T1-GE3CT