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SI4425BDY-T1-E3 P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SO
Price & Procurement
46,095 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.49000 $1.49
10 1.33900 $13.39
100 0.95300 $95.30
500 0.80778 $403.89
1,000 0.65804 $658.04

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4425BDY-T1-E3TR-ND
  • Minimum Quantity: 2,500
  • Quantity Available: 45,000 - Immediate
  • Unit Price: $0.67093
  • Digi-Reel®  : SI4425BDY-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 46,095 - Immediate
  • Unit Price: Digi-Reel®

SI4425BDY-T1-E3

Datasheet
Digi-Key Part Number SI4425BDY-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI4425BDY-T1-E3
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Description MOSFET P-CH 30V 8.8A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SO

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Documents & Media
Datasheets SI4425BDY
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI4425BDY-T1-E3CT