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SI3460BDV-T1-E3 N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP
Price & Procurement
56,860 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.28000 $1.28
10 1.12300 $11.23
100 0.76570 $76.57
500 0.63982 $319.91
1,000 0.54452 $544.52

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI3460BDV-T1-E3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 54,000 - Immediate
  • Unit Price: $0.52777
  • Digi-Reel®  : SI3460BDV-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 56,860 - Immediate
  • Unit Price: Digi-Reel®

SI3460BDV-T1-E3

Datasheet
Digi-Key Part Number SI3460BDV-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI3460BDV-T1-E3
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Description MOSFET N-CH 20V 8A 6-TSOP
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 20V 8A (Tc) 2W (Ta), 3.5W (Tc) Surface Mount 6-TSOP

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Documents & Media
Datasheets SI3460BDV
Video File MOSFET Technologies for Power Conversion
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
FET Feature -
Power Dissipation (Max) 2W (Ta), 3.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI3460BDV-T1-E3CT