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SI3410DV-T1-GE3 N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP
Price & Procurement
52,374 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.16000 $1.16
10 1.02100 $10.21
25 0.95880 $23.97
100 0.69600 $69.60
250 0.67120 $167.80
500 0.58150 $290.75
1,000 0.49489 $494.89

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI3410DV-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 51,000 - Immediate
  • Unit Price: $0.45045
  • Digi-Reel®  : SI3410DV-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 52,374 - Immediate
  • Unit Price: Digi-Reel®

SI3410DV-T1-GE3

Datasheet
Digi-Key Part Number SI3410DV-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI3410DV-T1-GE3
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Description MOSFET N-CH 30V 8A 6-TSOP
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 30V 8A (Tc) 2W (Ta), 4.1W (Tc) Surface Mount 6-TSOP

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Documents & Media
Datasheets SI3410DV
Video File MOSFET Technologies for Power Conversion
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1295pF @ 15V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI3410DV-T1-GE3CT