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SI2365EDS-T1-GE3 P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236
Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 0.75000 $0.75
10 0.52800 $5.28
100 0.34680 $34.68
500 0.20492 $102.46
1,000 0.15763 $157.63

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number SI2365EDS-T1-GE3CT-ND
Copy   SI2365EDS-T1-GE3CT-ND
Quantity Available 0
Manufacturer

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Manufacturer Part Number

SI2365EDS-T1-GE3

Copy   SI2365EDS-T1-GE3
Description MOSFET P-CH 20V 5.9A TO-236
Copy   MOSFET P-CH 20V 5.9A TO-236
Detailed Description

P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236

Copy   P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236
Product Attributes Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 32 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names SI2365EDS-T1-GE3CT
Alternate Package | This part is also available in the following packaging:

16:18:51 1/16/2019