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SI2324DS-T1-GE3 N-Channel 100V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
5,166 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 0.91000 $0.91
10 0.77700 $7.77
100 0.53860 $53.86
500 0.42052 $210.26
1,000 0.34181 $341.81

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Alternate Package
  • Tape & Reel (TR)  : SI2324DS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: $0.31174
  • Digi-Reel®  : SI2324DS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 5,166 - Immediate
  • Unit Price: Digi-Reel®

SI2324DS-T1-GE3

Datasheet
Digi-Key Part Number SI2324DS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2324DS-T1-GE3
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Description MOSFET N-CH 100V 2.3A SOT-23
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 100V 2.3A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets SI2324DS-T1-GE3
Video File MOSFET Technologies for Power Conversion
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 234mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 50V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2324DS-T1-GE3CT