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SI2312BDS-T1-GE3 N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
77,248 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 0.63000 $0.63
10 0.54300 $5.43
100 0.37620 $37.62
500 0.29376 $146.88
1,000 0.23876 $238.76

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI2312BDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 75,000 - Immediate
  • Unit Price: $0.21777
  • Digi-Reel®  : SI2312BDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 77,248 - Immediate
  • Unit Price: Digi-Reel®

SI2312BDS-T1-GE3

Datasheet
Digi-Key Part Number SI2312BDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2312BDS-T1-GE3
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Description MOSFET N-CH 20V 3.9A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets Si2312BDS
Video File MOSFET Technologies for Power Conversion
HTML Datasheet Si2312BDS
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2312BDS-T1-GE3CT