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SI2304BDS-T1-GE3 N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Price & Procurement
4,634 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 0.52000 $0.52
10 0.42400 $4.24
100 0.28820 $28.82
500 0.21614 $108.07
1,000 0.16209 $162.09

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Alternate Package
  • Tape & Reel (TR)  : SI2304BDS-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: $0.15362
  • Digi-Reel®  : SI2304BDS-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 4,634 - Immediate
  • Unit Price: Digi-Reel®

SI2304BDS-T1-GE3

Datasheet
Digi-Key Part Number SI2304BDS-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI2304BDS-T1-GE3
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Description MOSFET N-CH 30V 2.6A SOT23-3
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Documents & Media
Datasheets Si2304BDS
Video File MOSFET Technologies for Power Conversion
Catalog Page 1446 (CA2011 PDF)
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 15V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI2304BDS-T1-GE3CT