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SI1401EDH-T1-GE3 P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363)
Price & Procurement
44,536 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 0.59000 $0.59
10 0.50000 $5.00
100 0.34620 $34.62
500 0.27034 $135.17
1,000 0.21974 $219.74

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Alternate Package
  • Tape & Reel (TR)  : SI1401EDH-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 42,000 - Immediate
  • Unit Price: $0.21340
  • Cut Tape (CT)  : SI1401EDH-T1-GE3CT-ND
  • Minimum Quantity: 1
  • Quantity Available: 44,536 - Immediate
  • Unit Price: $0.63000

SI1401EDH-T1-GE3

Datasheet
Digi-Key Part Number SI1401EDH-T1-GE3DKR-ND
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Manufacturer

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Manufacturer Part Number SI1401EDH-T1-GE3
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Description MOSFET P-CH 12V 4A SC-70-6
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363)

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Documents & Media
Datasheets SI1401EDH
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Wafer Fab Addition 22/Jun/2015
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Digi-Reel® 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 34mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V
Vgs (Max) ±10V
FET Feature -
Power Dissipation (Max) 1.6W (Ta), 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6 (SOT-363)
Package / Case 6-TSSOP, SC-88, SOT-363
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1401EDH-T1-GE3DKR