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SI1062X-T1-GE3 N-Channel 20V 220mW (Ta) Surface Mount SC-89-3
Price & Procurement
23,588 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 0.68000 $0.68
10 0.50600 $5.06
25 0.44280 $11.07
100 0.24030 $24.03
250 0.23900 $59.75
500 0.19602 $98.01
1,000 0.14543 $145.43

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI1062X-T1-GE3TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 21,000 - Immediate
  • Unit Price: $0.12772
  • Digi-Reel®  : SI1062X-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 23,588 - Immediate
  • Unit Price: Digi-Reel®

SI1062X-T1-GE3

Datasheet
Digi-Key Part Number SI1062X-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI1062X-T1-GE3
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Description MOSFET N-CH 20V SC-89
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 20V 220mW (Ta) Surface Mount SC-89-3

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Documents & Media
Datasheets SI1062X
Video File MOSFET Technologies for Power Conversion
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 43pF @ 10V
FET Feature -
Power Dissipation (Max) 220mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI1062X-T1-GE3CT