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TPW1R306PL,L1Q N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
Price & Procurement
4,565 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 3.92000 $3.92
10 3.52100 $35.21
100 2.66340 $266.34
500 2.36748 $1,183.74
1,000 2.02716 $2,027.16
2,500 1.99756 $4,993.91

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : TPW1R306PLL1QTR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 0
  • Unit Price: $1.76699
  • Digi-Reel®  : TPW1R306PLL1QDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 4,565 - Immediate
  • Unit Price: Digi-Reel®

TPW1R306PL,L1Q

Datasheet
Digi-Key Part Number TPW1R306PLL1QCT-ND
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Manufacturer

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Manufacturer Part Number TPW1R306PL,L1Q
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Description X35 PB-F POWER MOSFET TRANSISTOR
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

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Documents & Media
Datasheets TPW1R306PL Datasheet
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIX-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.29mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8100pF @ 30V
FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerVDFN
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names TPW1R306PLL1QCT