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TPN1600ANH,L1Q N-Channel 100V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Price & Procurement
5,841 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.28000 $1.28
10 1.12800 $11.28
100 0.76900 $76.90
500 0.64258 $321.29
1,000 0.54689 $546.89
2,500 0.51271 $1,281.77

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : TPN1600ANHL1QTR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 5,000 - Immediate
  • Unit Price: $0.44800
  • Digi-Reel®  : TPN1600ANHL1QDKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 5,841 - Immediate
  • Unit Price: Digi-Reel®

TPN1600ANH,L1Q

Datasheet
Digi-Key Part Number TPN1600ANHL1QCT-ND
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Manufacturer

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Manufacturer Part Number TPN1600ANH,L1Q
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Description MOSFET N CH 100V 17A 8TSON-ADV
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 100V 17A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)

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Documents & Media
Datasheets TPN1600ANH
Featured Product U-MOSⅧ-H MOSFETs
Product Attributes
Type Description Select All
Categories
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 50V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 42W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names TPN1600ANHL1QCT