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NTHL080N120SC1 N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3
Price & Procurement
351 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 18.10000 $18.10
10 16.63600 $166.36
100 13.79120 $1,379.12
500 12.49826 $6,249.13
1,000 11.63630 $11,636.30

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NTHL080N120SC1

Datasheet
Digi-Key Part Number NTHL080N120SC1OS-ND
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Manufacturer

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Manufacturer Part Number NTHL080N120SC1
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Description SIC MOS TO247 80MW 1200V
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Manufacturer Standard Lead Time 6 Weeks
Detailed Description

N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3

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Documents & Media
Datasheets NTHL080N120SC1
Environmental Information Material Declaration NTHL080N120SC1
Featured Product Silicon Carbide (SiC) MOSFETs
PCN Assembly/Origin Mult Dev Material Chg 12/Sep/2019
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series -
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 20V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 800V
FET Feature -
Power Dissipation (Max) 348W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
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Additional Resources
Standard Package 450
Other Names NTHL080N120SC1OS