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FCP11N60F N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3
Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 3.36000 $3.36
10 3.01300 $30.13
25 2.84240 $71.06
100 2.42200 $242.20
500 1.98992 $994.96
2,500 1.53508 $3,837.70
5,000 1.47822 $7,391.11

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number FCP11N60FFS-ND
Copy   FCP11N60FFS-ND
Quantity Available 9,363
Can ship immediately
Manufacturer

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Manufacturer Part Number

FCP11N60F

Copy   FCP11N60F
Description MOSFET N-CH 600V 11A TO-220
Copy   MOSFET N-CH 600V 11A TO-220
Manufacturer Standard Lead Time 4 Weeks
Detailed Description

N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3

Copy   N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3
Documents & Media
Datasheets FCP11N60F
TO220B03 Pkg Drawing
Environmental Information Material Declaration FCP11N60F
PCN Design/Specification Logo 17/Aug/2017
PCN Assembly/Origin Wafer Fabrication 04/Feb/2013
Mult Devices Mold Compound 09/Apr/2019
PCN Packaging Mult Devices 24/Oct/2017
Product Attributes Select All
Categories
Manufacturer ON Semiconductor
Series SuperFET™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
Additional Resources
Standard Package ? 1,000
Other Names FCP11N60F-ND
FCP11N60FFS

23:46:51 8/20/2019