IRLML5103TRPBF Infineon Technologies | Discrete Semiconductor Products

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IRLML5103TRPBF P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23

Product Overview

Digi-Key Part Number	IRLML5103PBFCT-ND	Copy
Quantity Available	29,045 Can ship immediately
Manufacturer	Infineon Technologies	Copy
Manufacturer Part Number	IRLML5103TRPBF	Copy
Description	MOSFET P-CH 30V 760MA SOT-23	Copy
Detailed Description	P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23	Copy

Documents & Media

Datasheets	IRLML5103PbF
Other Related Documents	Part Number Guide
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below
Design Resources	IRLML5103TR Saber Model
Featured Product	Data Processing Systems
PCN Assembly/Origin	Assembly Site Addition 13/Mar/2015
PCN Packaging	Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 Barcode Label Update 24/Feb/2017 Mult Dev Lot No Format Chg 6/Apr/2018
Simulation Models	IRLML5103 Spice Model IRLML5103TRPBF Saber Model
EDA / CAD Models	Download from Ultra Librarian
Catalog Page	1299 (CA2011 PDF)

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	600 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.1nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 25V
FET Feature	-
Power Dissipation (Max)	540mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Micro3™/SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3