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IPN80R2K0P7ATMA1 N-Channel 800V 3A (Tc) 6W (Tc) Surface Mount PG-SOT223
Price & Procurement
4,753 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.28000 $1.28
10 1.12100 $11.21
100 0.76370 $76.37
500 0.63812 $319.06
1,000 0.54310 $543.10

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : IPN80R2K0P7ATMA1TR-ND
  • Minimum Quantity: 3,000
  • Quantity Available: 3,000 - Immediate
  • Unit Price: $0.49433
  • Digi-Reel®  : IPN80R2K0P7ATMA1DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 4,753 - Immediate
  • Unit Price: Digi-Reel®

IPN80R2K0P7ATMA1

Datasheet
Digi-Key Part Number IPN80R2K0P7ATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IPN80R2K0P7ATMA1
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Description MOSFET N-CHANNEL 800V 3A SOT223
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 800V 3A (Tc) 6W (Tc) Surface Mount PG-SOT223

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Documents & Media
Datasheets IPN80R2K0P7
Simulation Models CoolMOS™ Power MOSFET 800V P7 Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series CoolMOS™ P7
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 500V
FET Feature -
Power Dissipation (Max) 6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPN80R2K0P7ATMA1CT