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IPD50N04S4L08ATMA1 N-Channel 40V 50A (Tc) 46W (Tc) Surface Mount PG-TO252-3-313
Price & Procurement
2,446 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.16000 $1.16
10 1.01900 $10.19
100 0.69440 $69.44
500 0.58030 $290.15
1,000 0.49387 $493.87

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Alternate Package

IPD50N04S4L08ATMA1

Datasheet
Digi-Key Part Number IPD50N04S4L08ATMA1CT-ND
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Manufacturer

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Manufacturer Part Number IPD50N04S4L08ATMA1
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Description MOSFET N-CH 40V 50A TO252-3-313
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 40V 50A (Tc) 46W (Tc) Surface Mount PG-TO252-3-313

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Documents & Media
Datasheets IPD50N04S4L-08
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Mult Dev Wafer Fab 12/Feb/2019
PCN Packaging Cover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
Simulation Models OptiMOS-T2-40V-Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 17µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 25V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names IPD50N04S4L08ATMA1CT