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IPB180P04P4L02ATMA1 P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3
Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 4.93000 $4.93
10 4.40300 $44.03
100 3.61120 $361.12
500 2.92420 $1,462.10

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPB180P04P4L02ATMA1CT-ND
Copy   IPB180P04P4L02ATMA1CT-ND
Quantity Available 0
Manufacturer

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Manufacturer Part Number

IPB180P04P4L02ATMA1

Copy   IPB180P04P4L02ATMA1
Description MOSFET P-CH 40V 180A TO263-7
Copy   MOSFET P-CH 40V 180A TO263-7
Detailed Description

P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3

Copy   P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3
Documents & Media
Datasheets IPB180P04P4L-02
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin Wafer Test Add 27/Apr/2017
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Simulation Models OptiMOS-P2-Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 286nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 18700pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names IPB180P04P4L02ATMA1CT
Alternate Package | This part is also available in the following packaging:

05:20:08 2/19/2019