IPB120P04P4L03ATMA1 Infineon Technologies | Discrete Semiconductor Products

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IPB120P04P4L03ATMA1 P-Channel 40V 120A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB)

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Product Overview

Digi-Key Part Number	IPB120P04P4L03ATMA1CT-ND	Copy
Quantity Available	5,963 Can ship immediately
Manufacturer	Infineon Technologies	Copy
Manufacturer Part Number	IPB120P04P4L03ATMA1	Copy
Description	MOSFET P-CH 40V 120A TO263-3	Copy
Detailed Description	P-Channel 40V 120A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB)	Copy

Documents & Media

Product Attributes	Select All
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs	234nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	15000pF @ 25V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB