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IGT60R190D1SATMA1 N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3
Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 20.01000 $20.01
10 18.38900 $183.89
100 15.53060 $1,553.06
500 13.81558 $6,907.79
1,000 12.67221 $12,672.21

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IGT60R190D1SATMA1CT-ND
Copy   IGT60R190D1SATMA1CT-ND
Quantity Available 505
Can ship immediately
Manufacturer

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Manufacturer Part Number

IGT60R190D1SATMA1

Copy   IGT60R190D1SATMA1
Description IC GAN FET 600V 23A 8HSOF
Copy   IC GAN FET 600V 23A 8HSOF
Manufacturer Standard Lead Time 12 Weeks
Detailed Description

N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3

Copy   N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series CoolGaN™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.6V @ 960µA
Vgs (Max) -10V
Input Capacitance (Ciss) (Max) @ Vds 157pF @ 400V
FET Feature -
Power Dissipation (Max) 55.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-3
Package / Case 8-PowerSFN
 
Environmental & Export Classifications
Lead Free Status Contains lead
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names IGT60R190D1SATMA1CT
Alternate Package | This part is also available in the following packaging:

20:32:10 7/18/2019