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BSP315PH6327XTSA1 P-Channel 60V 1.17A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Price & Procurement
2,353 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 1.03000 $1.03
10 0.91500 $9.15
100 0.62420 $62.42
500 0.52160 $260.80

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : BSP315PH6327XTSA1TR-ND
  • Minimum Quantity: 1,000
  • Quantity Available: 2,000 - Immediate
  • Unit Price: $0.43097

BSP315PH6327XTSA1

Datasheet
Digi-Key Part Number BSP315PH6327XTSA1CT-ND
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Manufacturer

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Manufacturer Part Number BSP315PH6327XTSA1
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Description MOSFET P-CH 60V 1.17A SOT-223
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Manufacturer Standard Lead Time 10 Weeks
Detailed Description

P-Channel 60V 1.17A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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Documents & Media
Datasheets BSP315P
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Assembly/Origin PCN 2016-052-A Retraction 25/Apr/2017
Simulation Models MOSFET OptiMOS™ 60V P-Channel Spice Model
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id 2V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSP315PH6327XTSA1CT