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BSC320N20NS3GATMA1 N-Channel 200V 36A (Tc) 125W (Tc) Surface Mount PG-TDSON-8
Price & Procurement
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 4.93000 $4.93
10 4.44600 $44.46
100 3.57290 $357.29
500 2.77894 $1,389.47
1,000 2.30255 $2,302.55

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number BSC320N20NS3GATMA1CT-ND
Copy   BSC320N20NS3GATMA1CT-ND
Quantity Available 0
Manufacturer

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Manufacturer Part Number

BSC320N20NS3GATMA1

Copy   BSC320N20NS3GATMA1
Description MOSFET N-CH 200V 36A TDSON-8
Copy   MOSFET N-CH 200V 36A TDSON-8
Detailed Description

N-Channel 200V 36A (Tc) 125W (Tc) Surface Mount PG-TDSON-8

Copy   N-Channel 200V 36A (Tc) 125W (Tc) Surface Mount PG-TDSON-8
Documents & Media
Datasheets BSC320N20NS3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
PCN Packaging Mult Dev Pkg Box Chg 3/Jan/2018
Simulation Models OptiMOS™ Power MOSFET 200V N-Channel Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names BSC320N20NS3 GCT
BSC320N20NS3 GCT-ND
BSC320N20NS3GATMA1CT
Alternate Package | This part is also available in the following packaging:

09:08:40 1/16/2019