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C3M0120100K N-Channel 1000V 22A (Tc) 83W (Tc) Through Hole TO-247-4L
Price & Procurement
650 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 12.57000 $12.57
100 12.08180 $1,208.18
500 11.77996 $5,889.98

Submit a request for quotation on quantities greater than those displayed.

C3M0120100K

Datasheet
Digi-Key Part Number C3M0120100K-ND
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Manufacturer

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Manufacturer Part Number C3M0120100K
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Description MOSFET N-CH 1000V 22A TO247-4L
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 1000V 22A (Tc) 83W (Tc) Through Hole TO-247-4L

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Documents & Media
Datasheets C3M0120100K
PCN Design/Specification C3M00y Design Chg Apr/2018
Article Library Use SiC-Based MOSFETs to Improve Power Conversion Efficiency
Product Attributes
Type Description Select All
Categories
Manufacturer Cree/Wolfspeed
Series C3M™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 15V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 30