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C3M0075120D N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-3
Price & Procurement
81 In Stock
Can ship immediately
 

Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 34.55000 $34.55
100 30.56330 $3,056.33
250 27.90556 $6,976.39
500 25.24790 $12,623.95

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C3M0075120D

Datasheet
Digi-Key Part Number C3M0075120D-ND
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Manufacturer

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Manufacturer Part Number C3M0075120D
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Description MOSFET 1200V, 75 MOHM, G3 SIC
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 1200V 30A (Tc) 113.6W (Tc) Through Hole TO-247-3

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Documents & Media
Datasheets C3M0075120D
Featured Product C3M Planar Mosfet Technology
Article Library Use SiC-Based MOSFETs to Improve Power Conversion Efficiency
Product Attributes
Type Description Select All
Categories
Manufacturer Cree/Wolfspeed
Series C3M™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 54nC @ 15V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 1000V
FET Feature -
Power Dissipation (Max) 113.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
Moisture Sensitivity Level (MSL) 1 (Unlimited)
For Use With

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Additional Resources
Standard Package 30