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1,142 In Stock
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Quantity
All prices are in CAD.
Price Break Unit Price Extended Price
1 17.30000 $17.30
100 17.25240 $1,725.24

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Alternate Package
  • Tape & Reel (TR)  : C3M0065100J-TR-ND
  • Minimum Quantity: 1,600  Non-Stock 
  • Quantity Available: 0
  • Unit Price: $18.45221

C3M0065100J

Datasheet
Digi-Key Part Number C3M0065100J-ND
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Manufacturer

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Manufacturer Part Number C3M0065100J
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Description MOSFET N-CH 1000V 35A D2PAK-7
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 1000V 35A (Tc) 113.5W (Tc) Surface Mount D2PAK-7

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Documents & Media
Datasheets C3M0065100J
Article Library Use SiC-Based MOSFETs to Improve Power Conversion Efficiency
EDA / CAD Models C3M0065100J by SnapEDA
Product Attributes
Type Description Select All
Categories
Manufacturer Cree/Wolfspeed
Series C3M™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 15V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 600V
FET Feature -
Power Dissipation (Max) 113.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 50